Mobilidade elétrons
- Created by
- Renato Passos, Eng. de Software
- Reviewed by
- Renato Passos, Eng. de Software
Last updated: Apr 18, 2026
About this calculator
The electron mobility calculator (μ) determines the ratio between drift velocity (v_drift) and the applied electric field (E). This physical quantity measures how easily electrons move in a material under an electric field, critical for understanding conductors, semiconductors, and conductive materials.
The formula used is μ = v_drift / E, where drift velocity is the average particle motion and E is the electric field strength. The SI unit is m²/(V·s). Higher values indicate better conductive efficiency, common in pure metals, while impurity-laden or defective materials show reduced mobility.
This tool is useful in material physics research, electronics engineering, and conductive material development. For example, it can compare semiconductors in transistors or analyze temperature effects on conductivity. Mobility varies with factors like temperature, carrier concentration, and material purity.
When using the calculator, ensure input units (typically volts/meter for E) match experimental contexts. Common precautions include precise drift velocity measurement using field and current density techniques. In anisotropic materials, mobility may vary depending on measurement direction.
Frequently asked questions
What does electron mobility physically represent?
Electron mobility measures how easily electrons move in a material under an electric field, directly influencing the material's electrical conductivity.
How does temperature affect electron mobility?
Mobility typically decreases with rising temperature due to increased atomic vibrations that hinder electron movement.
Which materials have the highest electron mobilities?
Pure metals like copper and silver, and high-purity semiconductors like silicon and germanium exhibit significantly higher electron mobilities.
How is drift velocity measured experimentally?
Drift velocity is calculated from current density (J), carrier density (n), and electron charge (e) using J = n·e·v_drift.
Is there a difference between electron and hole mobility?
Yes, hole mobility is generally lower than electron mobility in semiconductors, affecting electronic device performance.